1.5v drive pch +sbd mosfet tt8u2 ? structure ? dimensions (unit : mm) silicon p-channel mosfet / schottky barrier diode ? features 1) pch mosfet and shottky barrier diode are put in tsst8 package. 2) high-speed switching and low on-resistance. 3) low voltage drive(1.5v). 4) built in low i r shottky barierr daiode. ? applications switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 3000 tt8u2 ? ? absolute maximum ratings (ta = 25 ?c) symbol limits unit drain-source voltage v dss ? 20 v gate-source voltage v gss ? 10 v continuous i d ? 2.4 a pulsed i dp ? 9.6 a continuous i s ? 0.8 a pulsed i sp ? 9.6 a channel temperature tch 150 ?c power dissipation p d 1.0 w / element *1 pw ? 10? s, duty cycle ? 1% *2 mounted on a ceramic board. symbol limits unit repetitive peak reverse voltage v rm 30 v reverse voltage v r 20 v forward current i f 1.0 a forward current surge peak i fsm 3.0 a junction temperature t j 150 ?c power dissipation p d 1.0 w / element *1 60hz / 1cycle *2 mounted on a ceramic board symbol limits unit total power dissipation p d 1.25 w / total range of storage temperature tstg ? 55 to ? 150 ?c * mounted on a ceramic board parameter parameter type parameter drain current source current (body diode) *1 *2 * *1 tsst8 (1) (2) (3) (4) (8) (7) (6) (5) abbreviated symbol : u02 (1) anode (2) anode (3) source (4) gate (5) drain (6) drain (7) cathode (8) cathode ? 1 body diode *2 (8) (7) (6) (5) (1) (2) (3) (4) ?1 1/5 2012.02 - rev.b www.rohm.com ?2012 rohm co., ltd. all rights reserved.
tt8u2 ? electrical characteristics (ta=25 ?c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 10v, v ds =0v drain-source breakdown voltage v (br)dss ? 20 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 20v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 10v, i d = ? 1ma - 80 105 m ? i d = ? 2.4a, v gs = ? 4.5v - 105 140 m ? i d = ? 1.2a, v gs = ? 2.5v - 150 225 m ? i d = ? 1.2a, v gs = ? 1.8v - 180 360 m ? i d = ? 0.5a, v gs = ? 1.5v forward transfer admittance l y fs l 2.4 - - s v ds = ? 10a, i d = ? 2.4v input capacitance c iss - 850 - pf v ds = ? 10v output capacitance c oss -60-pfv gs =0v reverse transfer capacitance c rss - 50 - pf f=1mhz turn-on delay time t d(on) -9-nsv dd ? 10v,v gs = ? 4.5v rise time t r -25-nsi d = ? 1.2a, turn-off delay time t d(off) -55-nsr l 8.3 ? fall time t f -45-nsr g =10 ? total gate charge q g -6.7-ncv dd ? 10v,v gs = ? 4.5v gate-source charge q gs -1.7-nc i d = ? 2.4a, gate-drain charge q gd -0.6-ncr l 4.2 ? ,r g =10 ? *pulsed ? body diode(source-drain) (ta=25 c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 2.4a, v gs =0v *pulsed symbol min. typ. max. unit forward voltage drop v f - 0.48 0.52 v i f =1.0a reverse leakage i r --10 ? av r =10v parameter parameter conditions conditions conditions parameter static drain-source on-state resistance r ds (on) * * * * * * * * * 2/5 2012.02 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. datasheet
tt8u2 ? electrical characteristic curves (ta=25 c) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 v gs = ? 1.5v v gs = ? 4.5v v gs = ? 2.5v v gs = ? 1.8v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : -i d [a] drain-source voltage : -v ds [v] 0 2 4 6 8 10 0246810 v gs = ? 4.5v v gs = ? 2.5v v gs = ? 1.8v v gs = ? 1.5v ta=25 c pulsed fig.2 typical output characteristics( ) drain-source voltage : -v ds [v] drain current : -i d [a] 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 v ds = ? 10v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25c fig.3 typical transfer characteristics drain current : -i d [a] gate-source voltage : -v gs [v] 10 100 1000 0.1 1 10 v gs = ? 1.5v v gs = ? 1.8v v gs = ? 2.5v v gs = ? 4.5v ta=25 c pulsed fig.4 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = ? 4.5v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25c fig.5 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = ? 2.5v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25c fig.6 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = ? 1.8v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25c fig.7 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = ? 1.5v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25c fig.8 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 0.1 1 10 0.1 1 10 v ds = ? 10v pulsed ta= ? 25c ta=25 c ta=75 c ta=125 c fig.9 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain-current : -i d [a] 3/5 2012.02 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. datasheet
tt8u2 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 pulsed ta= ? 25 c ta = 25 c ta = 75 c ta = 125 c reverse voltage : v r [v] reverse current : i r [ma] fig.1 reverse current vs. reverse voltage 0.001 0.01 0.1 1 0 100 200 300 400 500 600 pulsed ta=125 c ta=75 c ta=25 c ta= ? 25 c forward voltage : v f [mv] forward current : i f [a] fig.2 forward current vs. forward voltage 0.001 0.01 0.1 1 10 00.511.5 v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25c fig.10 reverse drain current vs. sourse-drain voltage reverse drain current : -i s [a] source-drain voltage : -v sd [v] 0 50 100 150 200 250 0246810 ta=25 c pulsed i d = ? 2.4a i d = ? 1.2a fig.11 static drain-source on-state resistance vs. gate source voltage static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : -v gs [v] 1 10 100 1000 10000 0.01 0.1 1 10 t r t f t d(on) t d(off) ta=25 c v dd = ? 10v v gs = ? 4.5v r g =10 ? pulsed fig.12 switching characteristics switching time : t [ns] drain-current : -i d [a] 0 1 2 3 4 5 02468 ta=25 c v dd = ? 10v i d = ? 2.4a r g =10 ? pulsed fig.13 dynamic input characteristics gate-source voltage : -v gs [v] total gate charge : qg [nc] 10 100 1000 10000 0.01 0.1 1 10 100 c oss c rss ta=25 c f=1mhz v gs =0v c iss gate-source voltage : -v ds [v] capacitance : c [pf] fig.14 typical capacitance vs. drain-source voltage 4/5 2012.02 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. datasheet
tt8u2 ? measurement circuits ? notice 1. sbd has a large reverse leak current compared to other type of diode. therefore ; it would raise a junction temperature, and increase a reverse power loss. further rise of inside temperature would cause a thermal runaway. this built-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current. 2. this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 5/5 2012.02 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. datasheet
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redundancy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
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